[19p-P05-1~33] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" (Poster)

[19p-P05-1] 【Absent】Homoepitaxial growth on β-Ga2O3 (010) and (001) substrates by mist-CVD method

〇Kazuaki Akaiwa¹, Taketoshi Tomida², Yongzhao Yao³, Koichi Kakimoto², Akira Yoshikawa² (1.Tottori univ., 2.Tohoku univ., 3.Mie univ.)

Keywords:

Gallium Oxides,mist-CVD growth