Session Details
[19p-P05-1~33]21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" (Poster)
Thu. Sep 19, 2024 1:30 PM - 3:30 PM JST
Thu. Sep 19, 2024 4:30 AM - 6:30 AM UTC
Thu. Sep 19, 2024 4:30 AM - 6:30 AM UTC
P05 (Exhibition Hall A)
[19p-P05-1]【Absent】Homoepitaxial growth on β-Ga2O3 (010) and (001) substrates by mist-CVD method
〇Kazuaki Akaiwa1, Taketoshi Tomida2, Yongzhao Yao3, Koichi Kakimoto2, Akira Yoshikawa2 (1.Tottori univ., 2.Tohoku univ., 3.Mie univ.)
[19p-P05-2]Study of Impurity Incorporation in β-Ga2O3 Films Grown by Mist CVD Method
〇(M2)Makoto Sugitani1, Tomohiro Yamaguchi1, Shohei Abe1, Kohei Sasaki2, Akito Kuramata2, Tohru Honda1, Takeyoshi Onuma1 (1.Kogakuin Univ., 2.Novel Crystal Technology, Inc.)
[19p-P05-3]Incubation Time of Ga(C5H7O2)3 Solution for α-Ga2O3 growth in Mist CVD
〇(M2)Kotono Yamada1, Takumi Yamamoto1, Hiroki Nagai1, Takeyoshi Onuma1, Tohru Honda1, Tomohiro Yamaguchi1 (1.Kogakuin Univ.)
[19p-P05-4]Analysis of Stacking Faults Corresponding to Wake-type Etch Pits in β-Ga2O3 (001) Epitaxial Wafers
〇Tomomichi Terada1, Noriyuki Hasuike1, Toshiyuki Isshiki1, Kenji Kobayashi2, Takeshi Fujitani2, Yukari Ishikawa3, Yongzhao Yao3,4 (1.Kyoto Inst. Tech., 2.Hitachi High-Tech, 3.Japan Fine Ceramics Center, 4.Mie Univ.)
[19p-P05-5]Dependence of Hydrochloric Acid Concentration Adding to Source in Mist CVD Growth of In2O3 Films on α-Al2O3 and Amorphous SiO2
〇(M1)Ryo Ishikawa1, Takumi Yamamoto1, Yuya Hayashi1, Shinya Aikawa1, Takeyoshi Onuma1, Tohru Honda1, Tomohiro Yamaguti1 (1.Kogakuin Univ.)
[19p-P05-6]Growth of β-Ga2O3 Single Crystals Using the FZ Technique with TiO2 as Solvent
Keito Iizuka1, 〇Kazuhiro Yamaki1, Yoshinobu Suzuki1, Keitaro Tezuka1, Akinobu Irie1 (1.Utsunomiya Univ.)
[19p-P05-7]Growth of Si-Doped β-Ga2O3 Single Crystals by the FZ Technique
〇(M1)Yoshinobu Suzuki1, Kazuhiro Yamaki1, Akinobu Irie1 (1.Utsunomiya Univ.)
[19p-P05-8]Growth of ZnO nanoparticle-dispersed Ga2O3 thin films by mist CVD and their structural characterization
〇Takeshi Ohkutsu1, Kyosuke Tanaka1, Hina Saito1, Aoi Tamura1, Tetsuya Kouno1, Hiroko Kominami1, Kazuhiko Hara1,2,3 (1.Shizuoka Univ., 2.Medical photonics., 3.Elec.Res.inst.)
[19p-P05-9]Deep-Level Defect Investigation of β-Ga2O3 Epitaxial Substrates Irradiated with High Energy H and He ions
〇Yoshitaka Nakano1, Joji Ito2 (1.Chubu Univ., 2.SHI-ATEX)
[19p-P05-10]Polarized transmission spectra of a β-Ga2O3 (100) crystal in the THz to visible ranges
〇Oudai Maruyama1, Kunio Yubuta2,3, Takamasa Sugawara2, Hideyuki Toyota1, Makoto Ishikawa4, Ariyuki Kato1, Takeya Unuma1 (1.Nagaoka Univ. of Technology, 2.Tohoku Univ., 3.Kyushu Univ., 4.Chiba Univ.)
[19p-P05-11]Piezoresponse force microscopy investigation of κ-Ga2O3 thin films epitaxially grown on an ε-GaFeO3 substrate
〇Yuji Miyato1, Kosuke Onishi1, Hirofumi Yamada1, Hiroyuki Nakanishi2 (1.Ryukoku Univ., 2.Kyoto Inst. Tech.)
[19p-P05-12]Structural Stability and Electronic Properties of (RhGa)2O3 and (RhAl)2O3 Alloys: A First-Principles Study
〇Kenta Matsubara1, Toru Akiyama1, Takahiro Kawamura1 (1.Mie Univ.)
[19p-P05-13]Evaluation on strength of β-Ga2O3 single crystals grown by VB method using nanoindentation
〇(M1C)Ryuta Ogawa1, Taishi Toshinori1 (1.Shinshu Univ.)
[19p-P05-14]Impedance characteristics of ZnGa2O4 thin films under deep UV irradiation
〇(M1)Reiya Kase1, Ryunosuke Maeda1, Yuya Oguma1, Kazunuki Yamamoto2, Satoshi Ishii1 (1.Tokyo Denki Univ., 2.Chiba Univ.)
[19p-P05-15]Fabrication and structural analysis of a r-GexSn1-xO2/r-SnO2 superlattice
〇Yui Takahashi1, Hitoshi Takane1, Takeru Wakamatsu1, Yuki Isobe1, Kentaro Kaneko2, Katsuhisa Tanaka1 (1.Kyoto Univ., 2.Ritsumeikan Univ.)
[19p-P05-16]The effects of low-temperature buffer layer on NiO epilayer by RF reactive magnetron sputtering
〇Taisei Hattori1, Mutsumi Sugiyama1,2 (1.Tokyo Univ. Sci., 2.RIST)
[19p-P05-17]Mist - CVD growth of the ZnO nanoparticle - dispersed (Zn,Mg)O thin films on c - plane sapphire
〇Hina Saito1, Takeshi Okutsu1, Kyosuke Tanaka1, Tetsuya Kono1, Yuko Kominami1, Kazuhiko Hara1,2,3 (1.Shizuoka Univ., 2.Medical photonics, 3.Elec. Res. Inst)
[19p-P05-18]Characterization of N-doped ZnO Films Deposited in /ce{Ar + N2} Gas Atmosphere
〇Haruki Ohmori1, Yumika Yamada1,2, Shuhei Funaki1, Yasuji Yamada1 (1.Shimane Univ., 2.Kobelco Res. Inst. Inc.)
[19p-P05-19]Effects of Nitrogen Doping and Annealing on Electrical Properties of ZnO Films
〇Yumika Yamada1,2, Haruki Ohmori2, Shuhei Funaki2, Yasuji Yamada2 (1.Kobelco Res. Inst. Inc., 2.Shimane Univ.)
[19p-P05-20]Characterization of Ti-doped ZnO transparent conductive thin films improved by annealing
〇Naoya Utsu1, Shinya Aikawa2, Ichiro Takano2 (1.Grad School, Kogakuin Univ., 2.Kogakuin Univ.)
[19p-P05-21]Characteristics of Zr-doped ZnO Thin Films Prepared by Reactive Sputtering
〇(M1C)kosuke Matsumoto1, Ichiro Takano2 (1.Grad School, Kogakuin Univ., 2.Kogakuin Univ.)
[19p-P05-22]Effect of Zn(O,S) formation by sulfurization of ZnO for p-NiO/n-ZnO solar cells
〇Haruki Ryu1, Yuna Koide1, Mutsumi Sugiyama1,2 (1.Tokyo Univ. Sci., 2.RIST)
[19p-P05-23]Metal induced crystallization using Al thin film for In-Ga-Zn-O thin-films
〇Yuki Nishimura1, Takanori Takahashi1, Hikaru Hoshikawa1, Yuto Kawato1, Yukiharu Uraoka1 (1.NAIST)
[19p-P05-24]Evaluation for thickness dependence of lattice parameter in polycrystalline In2O3 thin films induced by solid phase crystallization process
〇Tomoaki Ohno1, Takanori Takahashi1, Yuto Kawato1, Hikaru Hoshikawa1, Yukiharu Uraoka1 (1.NAIST)
[19p-P05-25]Dependence of Transistor Characteristic of Amorphous Ga-Sn-O TFT
on Input Power during Sputtering Deposition
〇(M1)Taiyo Shinoda1, Mutsumi Kimura1,2, Hidenori Kawanishi2 (1.Ryukoku Univ., 2.IMPR Center)
[19p-P05-26]Research on lowering the resistivity of SnO2 transparent conductive films produced by a low-temperature magnetron sputtering process
〇(M1C)Non Fujimoto1,3, Nobuto Oka1, Tetsuaki Nishida2, Junichi Nomoto3, Takashi Koida3 (1.Kindai Univ., 2.Environmental Materials Inst., 3.AIST.)
[19p-P05-27]Post-Annealing derived Mist CVD AlOx/AlxM1-xOy (M=Al, Hf) Properties for High-Temperature Sensors Applications
〇(PC)Abdul A Kuddus1, Keiji Ueno2, Hajime Shirai2, Shinichiro Mouri1 (1.Ritsumeikan Univ., 2.Saitama Univ.)
[19p-P05-28]Correlation between UPS Peak and Ozone Detection Sensitivity in Solution-processed IZO Thin Film
〇Hiroharu Sasajima1, Takaaki Morimoto1, Keisuke Ishii1 (1.NDA)
[19p-P05-29]Thermal Diffusion type Indium Doping in ZnO Nanoparticles
〇(D)Abdul Md Halim1, Toshiyuki Yoshida1, Yasuhisa Fujita1 (1.Shimane University)
[19p-P05-30]Identification of defects and impurities in hydrothermally grown ZnO single crystals by ESR
〇Takami Abe1, Hiroshi Osada1, Eli Wiens2, George Belev2, Ramaswami Sammynaiken2, Safa Kasap3 (1.Iwate Univ., 2.SSSC, 3.Univ. of Sask.)
[19p-P05-31]Deposition of crystalline IGZO using high-power impulse magnetron sputtering
〇Taketo Nagata1, Kazuya Ota2, Kosuke Takenaka2, Yuichi Setsuhara2, Takayuki Ohta1 (1.Meijo Univ., 2.Osaka Univ.)
[19p-P05-32]Study the deposition mechanism for ZnO thin films using a novel deposition method, “Electrostatic Spray Deposition” and property measurement
〇(D)Fysol Ibna1,2, Mutsumi Sugiyama1,3 (1.Department of Electrical Engineering, Tokyo University of Science, 2.University of Dhaka, Faculty of Science, Dhaka-1000, Bangladesh, 3.Research Institrute, RIST, Tokyo University of Scienece)
[19p-P05-33]Thermal Pressing Effect on sprayed n-type and p-type ZnO Nanoparticle Layers
〇(M2)Shrestha Dey Monty, Toshiyuki Yoshida, Yasuhisa Fujita