Presentation Information

[19p-P07-3]Development of the transparent-type GaAs solar cells with ultra-thin absorber

〇Kentaroh Watanabe1, Hassanet Sodabanlu1, Meita Asami1, Yoshiaki Nakano1,2, Masakazu Sugiyama1,2 (1.RCAST, Univ. of Tokyo, 2.Eng. Univ. of Tokyo)

Keywords:

Photovoltaic,III-V semiconductors,Optical management

The transparent-type ultra-thin GaAs solar cells transferred to the quartz substrate have been developed. Applying the grid-type back- and top- metal contact, the PV devices with GaAs absorber of 100 and 300 nm in thickness, respectively, was fabricated and demonstrated PV power output with half-transparency in the wavelength range of visible light. The evaluated PV performance showed decreased fill factor and short-circuit current density under the illumination. The improved method of the PV performance and controllability of visible color will be presented in this study.

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