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[19p-P07-7]Fabrication and characterization of p-Cu-Fe-O / Mg(OH)2 / n-Fe-O

〇(M2)Takumi Ezaka1, Masaya Ichimura1 (1.Nagoya Inst. of Tech.)
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Keywords:

solar cell

Fe2O3 are n-type semiconductors with a bandgap of 2.2~ 2.2 eV. Our group has reported Cu-doped p-type iron oxide thin films and homojunction solar cells with n-type iron oxide, but performance and reproducibility are issues. The reason may be that the bonding interface is not steep enough, and it is expected to be improved by introducing an intermediate layer. In this study, we report on the I-V characteristics when Mg(OH)2 is introduced as an intermediate layer.

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