Presentation Information
[19p-P08-1]Growth conditions and electrical transport properties of large single crystals of highquality InGaO3(ZnO)4 using the pressurized optical floating zone method
〇Momoka Hirai1, Ryotaro Kokai1, Yuki Yamazaki1, Takumi Takahashi1, Tadahito Inoue1, Isamu Shindo2, Shinji Kimura2, Takashi Watanabe2, Naoki Kase1, Nobuaki Miyakawa1 (1.Tokyo Univ. of Sci, 2.Crystal Systems Corp.)
Keywords:
IGZO,Floating Zone,Transparent conductive oxide semiconductor
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