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[19p-P08-1]Growth conditions and electrical transport properties of large single crystals of highquality InGaO₃(ZnO)₄ using the pressurized optical floating zone method

〇Momoka Hirai¹, Ryotaro Kokai¹, Yuki Yamazaki¹, Takumi Takahashi¹, Tadahito Inoue¹, Isamu Shindo², Shinji Kimura², Takashi Watanabe², Naoki Kase¹, Nobuaki Miyakawa¹ (1.Tokyo Univ. of Sci, 2.Crystal Systems Corp.)

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Keywords:

IGZO,Floating Zone,Transparent conductive oxide semiconductor

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[19p-P08-1]Growth conditions and electrical transport properties of large single crystals of highquality InGaO3(ZnO)4 using the pressurized optical floating zone method

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[19p-P08-1]Growth conditions and electrical transport properties of large single crystals of highquality InGaO₃(ZnO)₄ using the pressurized optical floating zone method