[20a-A22-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[20a-A22-1] Characterization of bonding states in SnSO₄ fabricated by sulfur vapor annealing

〇(M1)Kento Moriya¹, Daiki Watanabe¹, Daiki Ogawa¹, Tomohiro Yamaguchi¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

Keywords:

p-type transparent semiconductor,sulfate,sulfur