Session Details

[20a-A22-1~10]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Sep 20, 2024 9:00 AM - 11:45 AM JST
Fri. Sep 20, 2024 12:00 AM - 2:45 AM UTC
A22 (TOKI MESSE 2F)
Hiroyuki Nishinaka(Kyoto Inst. of Tech.)

[20a-A22-1]Characterization of bonding states in SnSO4 fabricated by sulfur vapor annealing

〇(M1)Kento Moriya1, Daiki Watanabe1, Daiki Ogawa1, Tomohiro Yamaguchi1, Shinya Aikawa1 (1.Kogakuin Univ.)
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[20a-A22-2]Preparation of SnS thin film by sulfurization annealing: Investigation of high purification by changing the amount of sulfur powder

〇Daiki Watanabe1, Kento Moriya1, Shinya Aikawa1 (1.Kogakuin Univ.)
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[20a-A22-3]Properties of SnO2 films grown by low temperature solution process

〇(M2)Ko Misato1, Madan Niraula1, Ichimura Masaya1 (1.Nitech)
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[20a-A22-4]Optimization of SnO fabrication using SnO2 target by sputtering and post-deposition annealing in reducing atmosphere

〇Tubasa Kobayasi1, Kanta Kibishi1, Shinya Aikawa1 (1.Kogakuin Univ.)
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[20a-A22-5]TEM analysis of rutile-type GeO2 film on TiO2 (001) substrate

〇(D)Hitoshi Takane1, Shinya Konishi1, Ryo Ota2, Yuichiro Hayasaka3, Takeru Wakamatsu1, Yuki Isobe1, Kentaro Kaneko4, Katsuhisa Tanaka1 (1.Kyoto Univ., 2.Hokkaido Univ., 3.Tohoku Univ., 4.Ritsumeikan Univ.)
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[20a-A22-6]Property changes of ZnO thin films grown by mist CVD with heat treatment

〇Ryosuke Ohashi1, Tatsuya Yasuoka1, Tatsuki Okada1, Toshiyuki Kawaharamura1,2 (1.KUT, 2.Research Institute)
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[20a-A22-7]Dependence of Annealing Temperature on Electrical Properties of Cu and N Co-doped ZnO Films

〇Masaki Tanaka1, Hiroshi Katumata1 (1.Meiji Univ.)
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[20a-A22-8]Characterization of pressure response in a surface mount package ZnO pressure sensor

〇Haruyuki Endo1, Takayuki Nihei1, Kazuyuki Meguro1, Hideki Oda1, Yasube Kashiwaba2 (1.Iwate Ind. Res. Inst., 2.Iwate Univ.)
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[20a-A22-9]Optical Property Near The Band Edge of Rocksalt-Structured MgZnO Alloys

〇Toshiki Mitomi1, Kotaro Ogawa1, Kyosuke Tanaka1, Ryosuke Nemoto1, Yuichi Ota2, Tomohiro Yamaguchi1, Toru Honda1, Takeyoshi Onuma1 (1.Kogakuin Univ., 2.Toyama Prefectural Univ.)
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[20a-A22-10]Epitaxial Growth of LiGa5O8 Thin Films via Mist CVD Method

〇Takumi Ikenoue1, Ryo Horiuchi1, Masao Miyake1 (1.Kyoto Univ.)
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