[20a-B3-1~8] 6.3 Oxide electronics

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[20a-B3-8] Gallium oxide thin film preparation by sputtering using liquid target

〇Tsuyoshi Koyanagi¹, Naoki Yamada¹, Takamichi Fujii² (1.Yamaguchi Univ., 2.TAK Thin Film Device.)

Keywords:

power semiconductor,Oxide Thin Film,Sputtering

Gallium oxide thin film was prepared by sputtering method using liquid gallium target. Epitaxial growth was confirmed on a sapphire substrate at a substrate temperature of 850°C.