Presentation Information
[20a-C42-9]Evaluation of absorption loss in high-Q Si nanocavities induced by neutron irradiation
〇Ayumi Ishihara1, Taiki Okuno2, Wataru Takahama1, Kosei Otsuka1, Yasushi Takahashi1 (1.Osaka Metropolitan University, 2.Institute of Physical and Chemical Research)
Keywords:
Silicon Photonics
As the amount of data sent by satellites increases, the use of silicon transceiver technology used on the ground is being considered for use in space. However, radiation in space can adversely affect electronic devices, so it is necessary to clarify the radiation resistance of silicon photonics elements. When the high-Q silicon nanocavity we developed is irradiated with radiation, the increase in optical absorption can be quantitatively estimated. In this study, we report our evaluation of the increase in absorption loss caused by neutron irradiation in high-Q nanocavities.
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