[20p-A41-1~8] KS.1 Solid State Quantum Sensor Group

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[20p-A41-7] Quantitatively charge-state-stability analysis of silicon vacancies in SiC

〇Yuichi Yamazaki¹, Ryosuke Akashi¹, Masafumi Hanawa², Koichi Murata², Shin-ichiro Sato¹, Nobumasa Miyawaki¹, Shiro Entani¹, Yuta Masuyama¹, Yusuke Nishiya^3,4, Yu-ichiro Matsushita^1,3,4, Hidekazu Tsuchida², Makoto Kohda^1,5, Takeshi Ohshima^1,5 (1.QST, 2.CRIEPI, 3.Quemix, 4.Univ. of Tokyo, 5.Tohoku Univ.)

Keywords:

Spin defect,Charge state stability,Quantitative analysis

A systematic investigation of the doping amount/type and Vsi concentration dependence of charge state stability of silicon vacancy (Vsi) in silicon carbide (SiC) has been carried out, and a quantitative analysis based on a theoretical model has been performed. A carrier transfer model was constructed considering both dopant compensation effects and electron transfer through the conduction band from Vc(carbon vacancy)⁺ to Vsi⁰ under light illumination, and it was confirmed that the model can approximately reproduce the experimental results.