[20p-A41-1~8] KS.1 Solid State Quantum Sensor Group

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-A41-8] Polarization property of V2 center fluorescence in 4H-SiC at room temperature

〇(P)Tetsuri Nishikawa¹, Naoya Morioka^1,2, Hiroshi Abe³, Takeshi Ohshima^3,4, Norikazu Mizuochi^1,2,5 (1.ICR Kyoto Univ., 2.CSRN, 3.QST, 4.Tohoku Univ., 5.QUP KEK)

Keywords:

V2 center,Color center,4H-SiC

In 4H-SiC, there are two types of silicon vacancies at a hexagonal site (V1 center) and quasi-cubic site (V2 center), where a V2 center is expected for the quantum technology application due to its room-temperature detectable spin. They have two excited states due to their excited electron configuration, and these excited states were confirmed for the V1 center by the spectrum and polarization properties of the fluorescence. However, for the V2 center, although the existence of the second excited state has been suggested by the temperature dependence of resonant-optical-transition linewidth and by the DFT calculations, it has not yet been demonstrated. Here, we investigate the fluorescence polarization properties of a single V2 center by observing from the (0001) and (1-100) faces at room temperature to evaluate the influence of the second excited state on the optical properties. We measured the detection polarization angle dependence of the V2 center fluorescence and observed the polarization properties originating from both the two excited states. Also, we found that the total saturated fluorescence intensity of the V2 center increases with (1-100) face measurements compared with (0001) face measurements. In this presentation, we will report the details of these results and discussions.