[20p-D61-1~14] 10.1 Emerging materials in spintronics and magnetics (including fabrication and characterization methodologies)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)English Presentation

[20p-D61-8] Hydrogen annealing effect on ferromagnetic ultra-thin films

〇Tomohiro Koyama^1,2,3,4, Noriyuki Seki¹, Daichi Chiba^1,3,4,5 (1.SANKEN, Osaka Univ., 2.JST PRESTO, 3.CSRN, Osaka Univ., 4.OTRI, Osaka Univ., 5.SRIS, Tohoku Univ.)

Keywords:

ferromagnetic thin film,hydrogen,device fabrication process

In ferromagnetic thin films, it is often pointed out that the degradation of magnetic properties is caused by oxidization through air exposure or process-damage. In order to resolve this problem, we investigate a new device process: annealing under hydrogen (H₂) gas. When a MgO layer was formed with high sputtering power in Pt/Co/MgO structure, no ferromagnetic behavior was observed due to an excessive oxidization damage to the Co layer. However, a clear hysteresis was observed after annealing the film under H₂ gas. This result indicates that the ferromagnetic state is restored by the H₂-annealing in the Pt/Co/MgO structure. No clear change occurs in the film with no-H₂-anneal. Thus, H₂ plays a crucial role in changing the magnetic property.