[20p-D61-1~14] 10.1 新物質・新機能創成（作製・評価技術）

15:00 〜 15:15英語発表

[20p-D61-8] Hydrogen annealing effect on ferromagnetic ultra-thin films

〇Tomohiro Koyama^1,2,3,4, Noriyuki Seki¹, Daichi Chiba^1,3,4,5 (1.SANKEN, Osaka Univ., 2.JST PRESTO, 3.CSRN, Osaka Univ., 4.OTRI, Osaka Univ., 5.SRIS, Tohoku Univ.)

キーワード：

ferromagnetic thin film、hydrogen、device fabrication process

In ferromagnetic thin films, it is often pointed out that the degradation of magnetic properties is caused by oxidization through air exposure or process-damage. In order to resolve this problem, we investigate a new device process: annealing under hydrogen (H₂) gas. When a MgO layer was formed with high sputtering power in Pt/Co/MgO structure, no ferromagnetic behavior was observed due to an excessive oxidization damage to the Co layer. However, a clear hysteresis was observed after annealing the film under H₂ gas. This result indicates that the ferromagnetic state is restored by the H₂-annealing in the Pt/Co/MgO structure. No clear change occurs in the film with no-H₂-anneal. Thus, H₂ plays a crucial role in changing the magnetic property.