[20p-D62-1~14] 15.1 Bulk crystal growth

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[20p-D62-6] Growth of GaFeO₃ single crystals controlled at [001] by FZ method

〇(M1C)Yuta Takano¹, Yuki Maruyama¹, Masanori Nagao¹, Satoshi Watauti¹ (1.Univ.Yamanashi)

Keywords:

fz method,thin film substrate material