Session Details

[20p-D62-1~14]15.1 Bulk crystal growth

Fri. Sep 20, 2024 1:00 PM - 4:45 PM JST
Fri. Sep 20, 2024 4:00 AM - 7:45 AM UTC
D62 (Bandaijima Bldg)
Yuui Yokota(Tohoku Univ.), Toshinori Taishi(Shinshu Univ.)

[20p-D62-1]Ru-Mo-W single crystal wire segregation behaviour grown by the Dewetting micro-pulling-down method and relationship between resistivity and composition

〇Kotaro Yonemura1,2, Rikito Murakami2, Shiika Itoi3, Kei Kamada3,4, Takahiko Horiai2,4, Takashi Hanada2, Akihiro Yamaji2,4, Masao Yoshino2,4, Hiroki Sato2,4, Yuji Ohashi2,4, Shunsuke Kurosawa2,4, Yuui Yokota2,4, Akira Yoshikawa2,4 (1.Grad. Sch. Eng., Tohoku Univ., 2.IMR, Tohoku Univ., 3.C&A Corp., 4.NICHe, Tohoku Univ.)

[20p-D62-2]Growth of Mg2Si/Si Thermoelectric Crystals with Eutectic Morphology from chemical compositions with excess Mg

〇Yuui Yokota1,2, Hiraku Ogino3, Hiroki Sato2,3, Atsushi Okuno4, Takahiko Horiai2, Akira Yoshikawa1,2 (1.IMR, Tohoku Univ., 2.NICHe, Tohoku Univ., 3.AIST, 4.SANKO)

[20p-D62-3]Improvement of Fe-Ga single crystal growth conditions by vertical Bridgman method

〇Kiyoshi Izumi1, Kazuki Tatsumiya1, Masaaki Sato1, Gen Fujii1, Kota Jinno1, Kazuhiko Okubo1 (1.Sumitomo Metal Mining)

[20p-D62-4]Study of boron(B) concentration and hall mobility in SiGe crystals grown by traveling liquidus-zone (TLZ) method

〇Shinichi Kojima1, Toshinori Taishi1, Yasutomo Arai2, Kyoichi Kinoshita3 (1.Shinshu Univ., 2.JAXA, 3.Meiji Univ.)

[20p-D62-5]Growth of Zn-Doped β-Ga2O3 Single Crystals using the FZ method

〇(M1)Daichi Urushibata1, Masanori Nagao1, Yuki Maruyama1, Satoshi Watauchi1 (1.Yamanashi University)

[20p-D62-6]Growth of GaFeO3 single crystals controlled at [001] by FZ method

〇(M1C)Yuta Takano1, Yuki Maruyama1, Masanori Nagao1, Satoshi Watauti1 (1.Univ.Yamanashi)

[20p-D62-7]Elucidation of the mechanism of solidification initiation in the production of Al2O3 microcrystal spheres using grain boundary network analysis

〇(M2)Shotaro Ikeda1, Kentaro Kutsukake1,2,3, Hiroaki Kudo4, Ryoji Katsube1, Noritaka Usami1,2,5 (1.Grad. Eng. Nagoya Univ., 2.IMaSS, 3.AIP, RIKEN, 4.Grad. Info. Nagoya Univ., 5.InFuS-Nagoya Univ.)

[20p-D62-8]Single crystal growth by melt-solidification method and physical properties characterization of layered oxychalcogenide

〇Takahiro Kato1,2, Yuki Iwasa1, Yuui Yokota3, Shigeyuki Ishida1, Takahiko Horiai3, Akira Yoshikawa3, Taichiro Nishio2, Hiroshi Eisaki1, Hiraku Ogino1 (1.AIST, 2.Tokyo Univ. of Sci., 3.Tohoku Univ.)

[20p-D62-9]Crystal growth and optical properties of Fe-doped Lu2Si2O7

〇Takahiko Horiai1, Yuui Yokota2, Masao Yoshino1, Akira Yoshikawa1,2 (1.NICHe, Tohoku Univ., 2.IMR, Tohoku Univ.)

[20p-D62-10]Single crystal growth of Ce3+, Pr3+ co-doped Lu2Si2O7 and optimization of Ce3+/Pr3+ ratio

〇Abe Yuka1,2, Horiai Takahiko2,3, Yokota Yuui2,3, Yoshino Masao2,3, Murakami Rikito2, Hanada Takashi2, Yamaji Akihiro2,3, Sato Hiroki2,3, Ohashi Yuji2,3, Kurosawa Syunsuke2,3, Kamada Kei2,3, Yoshikawa Akira2,3 (1.Grad. Sch. of Eng., Tohoku Univ., 2.IMR, Tohoku Univ., 3.NICHe, Tohoku Univ.)

[20p-D62-11]Crystal growth and luminescent properties of AlTaO4

〇Akihiro Yamaji1,2, Kurosawa Shunsuke1,2, Yoshikawa Akira1,2 (1.Tohoku Univ. NICHe, 2.Tohoku Univ. IMR)

[20p-D62-12]Y(Ta1-xNbx)O4 single-crystal scintillators

〇(D)YUESHEN ZHOU1,2, Dongsheng Yuan1, Garica Villora1, Kiyoshi Shimamura1,2 (1.NIMS, 2.Waseda Univ.)

[20p-D62-13]Investigation of the formation mechanism of light scattering defects in CsLiB6O10 crystal through thermal treatment

〇Yoshihiro Kataoka1, Yuto Matsumi1, Ryunosuke Oura2, Ryota Murai3, Yoshinori Takahashi3, Hideo Takazawa1, Shigeyoshi Usami1, Masayuki Imanishi1, Mihoko Maruyama1, Yusuke Mori1,3, Masashi Yoshimura2,3 (1.Grad. Sch. of Eng., Osaka Univ., 2.ILE, Osaka Univ., 3.SOSHO CHOKO Inc.)

[20p-D62-14]Investigation of seed polarity of SrB4O7 crystal to reduce internal defects.

〇Tomoya Hatakeyama1, Haruya Kobayashi1, Jun Tanikawa1, Hideo Takazawa1, Ryota Murai2, Yoshinori Takahashi2, Hironori Igarashi3, Tomoaki Nambu4, Shigeyoshi Usami1, Masayuki Imanishi1, Mihoko Maruyama1, Yusuke Mori1,2, Masashi Yoshimura2,4 (1.Grad.Sch.of Eng.,Osaka Univ., 2.SOSHO CHOKO Inc., 3.Gigaphoton Inc., 4.ILE,Osaka Univ.)