[22a-12K-1~11] 10.1 Emerging materials in spintronics and magnetics (including fabrication and characterization methodologies)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[22a-12K-9] Observation of domain wall in chiral antiferromagnet Mn₃Sn

〇(DC)Moeta Tsukamoto¹, Zhewen Xu², Tomoya Higo^1,3,4, Kouta Kondo^4,5, Kento Sasaki¹, Mihiro Asakura¹, Shoya Sakamoto³, Pietro Gambardella², Shinji Miwa^3,4,6, YoshiChika Otani^3,4,5,6, Satoru Nakatsuji^1,3,4,6,7, Christian Degen², Kensuke Kobayashi^1,6,8 (1.Dept. of Phys. UTokyo, 2.ETH Zurich, 3.ISSP UTokyo, 4.JST CREST, 5.RIKEN CEMS, 6.TSQS Inst. UTokyo, 7.Johns Hopkins Univ., 8.IPI UTokyo)

Keywords:

chiral antiferromagnet,diamond nitrogen-vacancy center,quantum sensor

Chiral antiferromagnet Mn₃Sn with perpendicular magnetization have been studied for next-generation magnetic memory. We observed the detail of domain wall in the thin film using a scanning nitrogen-vacancy center in diamond.