[22a-13P-1~11] 9.4 Thermoelectric conversion

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)English Presentation

[22a-13P-9] Efficiency of Li as a p-type Dopant in Epitaxial Mg₂Sn Thermoelectric Thin Films

〇(D)Kenneth Magallon Senados^1,2, Takashi Aizawa², Isao Ohkubo², Takeaki Sakurai¹, Takao Mori^1,2 (1.Tsukuba Univ., 2.NIMS)

Keywords:

thermoelectrics,epitaxial thin film,molecular beam epitaxy

Among the TE materials, Mg₂Sn and its derivatives Mg₂(Si, Sn, Ge) have emerged as promising low-cost options for IoT applications. This study examines the efficiency of Li as a p-type dopant to the TE properties of our epitaxial Mg₂Sn thin films, wherein Li was chosen due to its low formation energy in the Mg-site.