Presentation Information
[22a-P01-10]Tuning method of crystal structure and carrier concentration using all-solid electric double layer transistor driven under high pressure
〇Ryo Matsumoto1, Shintaro Adachi2, Fujioka Masaya3, Kensei Terashima1, Hiroya Sakurai1, Yoshihiko Takano1 (1.NIMS, 2.KUAS, 3.AIST)
Keywords:
electric double layer transistor,Ionic conductor,High pressure