[22p-12E-1~13] 2.1 Detection Devices

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[22p-12E-10] Comparison between crystal quality and two-dimensional carrier transport characteristics of TlBr crystals

〇Yusuke Sugai¹, Sota Hasegawa¹, Kenichi Watanabe¹, Keitaro Hitomi², Mitsuhiro Nogami² (1.Kyushu Univ., 2.Tohoku Univ.)

Keywords:

compound semiconductor,thallium bromide

To realize a large, high-quality TlBr detector, it is necessary to grow crystals with uniform charge transport properties. We have built and improved a system to evaluate the two-dimensional distribution of the transport properties of charge carriers generated on the crystal surface by pulsed laser irradiation. We have investigated the relationship between crystal orientation and carrier transport properties by comparing the results with crystal orientation distributions obtained using neutron Bragg dip imaging and electron beam backscatter diffraction (EBSD).