Presentation Information
[22p-12K-12]Effect of Lanthanide Materials for A-site Substitution in BiFeO3-based
Thin Films on Magnetic Properties and Ferroelectric Properties
〇(DC)Soumyaranjan Ratha1, Genta Egawa1, Satoru Yoshimura1 (1.Akita Univ.)
Keywords:
Multiferroic thin films,Magnetism,Magnetic devices
BiFeO3 (BFO) thin films, with high ferroelectric and antiferromagnetic properties, offer a solution for energy-efficient magnetic devices. Substituting Lanthanides in A-site and Cobalt in B-site improves their magnetic characteristics. In this study, various Lanthanides were explored, leading to promising films like (Bi,Nd)(Fe,Co)O3 for magnetic memory devices, (Bi,La)(Fe,Co)O3 for magneto-optical devices, and (Bi,Eu)(Fe,Co)O3 for nano sensor devices due to their specific properties.
However, films doped with Er, Dr, and Gd exhibited poor ferroelectric properties. XPS analysis showed high oxygen vacancy (Ov) in Er-doped films, attributed to Er's oxidation tendency, forming disruptive Er-O phases. These vacancies act as pinholes, increasing current leakage and adversely affecting ferroelectric characteristics. Understanding these mechanisms is crucial for optimizing multiferroic thin films for efficient and diverse applications.
However, films doped with Er, Dr, and Gd exhibited poor ferroelectric properties. XPS analysis showed high oxygen vacancy (Ov) in Er-doped films, attributed to Er's oxidation tendency, forming disruptive Er-O phases. These vacancies act as pinholes, increasing current leakage and adversely affecting ferroelectric characteristics. Understanding these mechanisms is crucial for optimizing multiferroic thin films for efficient and diverse applications.