Presentation Information
[22p-12K-13]Enhancing Perpendicular Magnetic Anisotropy in BiFeO3-based
Multiferroic Thin Films via Dual B-Site Substitution Ni and Co
〇(D)Swati Sucharita Das1, Soumyaranjan Ratha1, Genta Egawa1, Satoru Yoshimura1 (1.Akita Univ.)
Keywords:
Multiferroic thin films,Magnetism,Perpendicular magnetic anisotropy
Efficient magnetic memory devices, vital for low-power consumption, spotlight Bismuth Ferrite (BFO) owing to its multiferroic nature enabling electric field-induced magnetization switching at room temperature. Despite its promise, BFO grapples with antiferromagnetic behavior, saturation magnetization (Ms), perpendicular magnetic anisotropy (PMA), and perpendicular coercivity (Hc⊥) issues, particularly for racetrack memory applications. Previous work on (Bi0.50Nd0.50)(Fe0.75Co0.25)O3, substituting Nd in the A-site (50 at%) and Co in the B-site (25 at%), showcased enhanced Ms (80 emu/cm3) and Hc⊥ (2.1 kOe). However, the challenge lies in refining PMA, indicated by the S⊥/S// ratio. Initial attempts with Ni substitution for Co yielded high S⊥/S// but low Hc⊥. This study explores the synergy of Co and Ni as dual B-site dopants to achieve both high S⊥/S// (indicative of improved PMA) and elevated Hc⊥, rendering it suitable for advanced memory device applications.