[22p-P01-1~16] 12.2 Characterization and Materials Physics

[22p-P01-7] Enhancement of photoluminescence of ZnSe quantum dots by means of surface plasmon resonance

Takayuki Kinoshita¹, Shogo Tokimori¹, Ryohei Hatsuoka¹, Tomoki Nagaoka¹, Takashi Nagase^1,2, Takashi Kobayashi^1,2, Hiroshi Ikeda^1,2, Koichi Okamoto¹, 〇Hiroyoshi Naito^1,2 (1.Osaka Metro. Univ., 2.RIMED)

Keywords:

ZnSe quantum dots,Plasmon resonance,photoluminescence enhancement

Enhanced photoluminescence intensity of ZnSe quantum dot due to plasmon resonance was observed when a spacer layer of Al₂O₃, with a thickness of 5 nm, is placed between Ag thin film and ZnSe quantum dot thin film. It also demonstrates that in this configuration, the photoluminescence lifetime is reduced due to plasmon resonance.