Presentation Information

English Presentation

[22p-P03-25]Carrier lifetime measurement of perovskite films with n-type amorphous silicon via microwave photoconductivity decay

〇(M1)CHENXI LI¹, Huynh Thi Cam Tu¹, PENG LIU², Md. Shahiduzzaman², Tetsuya Taima², Keisuke Ohdaira¹ (1.JAIST, 2.Kanazawa Univ.)

Keywords:

Perovskite solar cell,Carrier lifetime,Cat-CVD

This study explores the characterization of carrier lifetime for CH₃NH₂PbI₃ films with hydrogenated n-type amorphous Si (n-a-Si:H) as an electron transport layer (ETL). The use of n-a-Si:H ETL is to enhance the long-term stability of CH₃NH₂PbI₃ solar cells. The average carrier lifetime of CH₃NH₂PbI₃ films with n-a-Si:H ETL was improved to 1.21–1.36 μs, compared to the lifetime of CH₃NH₂PbI₃ films without n-a-Si:H ETL of 78–139 ns.

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