Presentation Information
[22p-P03-4]Investigation of Hole Transport Layer for Inverted Bismuth Silver Iodide Solar Cells
〇Akira Nakagawa1, Yoshiharu Takane1, Naoyuki Shibayama2, Masashi Ikegami2, Tsutomu Miyasaka2 (1.Citizen Watch CO., LTD., 2.Toin Yokohama Univ.)
Keywords:
solar cell,Silver Bismuth Iodide,Nickel Oxide
Silver bismuth iodide is a promising material for lead-free perovskite solar cells for indoor lighting. In this study, a zinc-doped nickel oxide film was investigated as a hole transport layer. Nickel oxide is used as a hole transport layer for p-type semiconductors. However, nickel oxide has high resistance. Therefore, we improved nickel oxide by doping zinc into nickel oxide and treating it with ultraviolet ozone.