[23a-12H-1~11] 6.1 Ferroelectric thin films

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[23a-12H-8] The effect of the seed layer thickness on the electrical properties of (100) BiFeO₃ epitaxial films

〇(DC)Aphayvong Sengsavang¹, Kohei Takaki¹, Meika Takagi¹, Norifumi Fujimura¹, Takeshi Yoshimura¹ (1.Osaka Metro. Univ.)

Keywords:

Piezoelectric vibration energy harvesting,epitaxial film,BiFeO3

Epitaxial growth of BiFeO₃ cause the domain wall contribution, which leads to a reduction in the relative permittivity, resulting in an improvement in the electromechanical properties. It was found that the crystal structure of BiFeO₃ epitaxial film on Si substrate, depends on the thickness of the seed layer. Therefore, the electrical properties of BiFeO₃ epitaxial film on LaNiO₃ seed layer with different thickness will be discussed .