[23a-31B-1~8] 17.3 Layered materials

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[23a-31B-7] Electronic structures of in-plane heterosheets consisting of WSe₂ and Janus WSSe

〇Mina Maruyama¹, Susumu Okada¹, Yanlin Gao¹ (1.Univ. Tsukuba)

Keywords:

transition metal dichalcogenide,Janus structure,electronic structure

We investigated electronic structures of in-plane heterostructures consisting of WSe₂ and Janus WSSe. Our calculations show that in-plane heterostructures of WSe₂ and WSSe have band bending owing to borders between WSe₂ and WSSe. The in-plane heterostructure of WSe₂ and WSSe shows type III band-edge alignment around the border.