Presentation Information
[23p-1BJ-10]Amorphous W-Ta-B alloys: spin Hall material for energy-efficient SOT-MRAM with high thermal tolerance
〇Yuki Hibino1, Tatsuya Yamamoto1, Tomohiro Taniguchi1, Kay Yakushiji1, Hitoshi Kubota1, Shinji Yuasa1 (1.AIST)
Keywords:
MRAM,Spin-orbit torque,Spin Hall effect
Current-induced spin-orbit-torques (SOTs) enable fast and reliable magnetization switching which is a new promising writing scheme for SOT-MRAMs. A typical spin source of SOT-MRAMs is the spin Hall material, and the material choice is the most important factor for developing SOT-MRAMs. For practical application, spin Hall material needs to resolve various challenges such as high SOT efficiency, high compatibility with magnetic tunnel junctions (MTJs), and high thermal tolerance up to 400 °C.
Here, we present amorphous W-Ta-B alloys as a new candidate spin Hall material satisfying all the above requirements simultaneously. We show that W-Ta-B alloys exhibit a large SOT efficiency of up to 40% larger than the crystalline W, and the thermal tolerance can reach up to 400 °C. We fabricated nanoscale three-terminal devices and demonstrated high magnetoresistance ratios up to 130% and low intrinsic switching current densities down to 4×106 A/cm2.
Here, we present amorphous W-Ta-B alloys as a new candidate spin Hall material satisfying all the above requirements simultaneously. We show that W-Ta-B alloys exhibit a large SOT efficiency of up to 40% larger than the crystalline W, and the thermal tolerance can reach up to 400 °C. We fabricated nanoscale three-terminal devices and demonstrated high magnetoresistance ratios up to 130% and low intrinsic switching current densities down to 4×106 A/cm2.