[23p-1BJ-1~12] 10.3 Spin devices, magnetic memories and storages

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[23p-1BJ-3] Fabrication of (110) Oriented FeAlSi Thin Film for Application for TMR Sensor

〇(M1)Daisuke Amiie¹, Takayuki Hojo¹, Shoma Akamatsu¹, Masakiyo Tsunoda¹, Mikihiko Oogane¹ (1.Tohoku Univ.)

Keywords:

TMR