[24a-12G-1~9] 6.3 Oxide electronics

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[24a-12G-2] Emergent magnetotransport at oxide heterointerface

〇Takahiro Fujita¹, Mizuki Ohno¹, Masashi Kawasaki^1,2 (1.The Univ. of Tokyo, 2.RIKEN CEMS)

Keywords:

oxide thin film,topological Hall effect,magnetotransport

Magnets with topologically non-trivial spin textures can be the sauce of the so-called “emergent field” for the conducting electrons, which in turn evokes emergent magnetotransport phenomena. Magnetic metals have been the conventional target of research for the magnetotransport phenomena. On the other hand, we have recently discovered that even a heterointerface comprising of non-magnetic metal and magnetic insulator can exhibit the topological Hall effect, indicating the proximity effect of the emergent field. Here, we present the uniqueness of “interfacial emergent magnetotransport” in the oxide interface and the perspective for functionalizing them.