[24a-21C-1~9] 15.4 III-V-group nitride crystals

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)English Presentation

[24a-21C-4] Challenges of P incorporation into AlPN

〇Markus Pristovsek¹, Xu Yang¹, Emi Kano¹, Nobuyuki Ikarashi¹ (1.Nagoya Univ.)

Keywords:

III-nitride,MOVPE,defects

AlPN could provide a good alternative as a barrier layer for high electron mobility transistors with high polarisation. We have systematically investigated the growth of AlPN. The highest P incorporation was at very low V/III ratios (below 10). To avoid Ga back etching and carrier over, the AlPN has to be grown at low temperatures (<960°C) and under N2 carrier gas. Still, the incorporation of P on the desired group V lattice site is still less than 1%. More P also incorporates on the group III (Al) site, finally leading to the formation of an Al1-xPxN compound at higher P gas phase concentration due to the stronger P-N bond compared to Al-N. Nevertheless, the critical thickness of Al1-xPxN is larger than AlN, allowing for up to 15 nm thick barriers which can be overgrown by GaN. We have fabricated AlPN on GaN hetero-structures with different P-contents, which showed a clear 2-dimensional electron gas (2DEG) in temperature dependent Hall effect measurements.