Presentation Information
[24a-31A-8]Implementation of Operant Conditioning in Four-Terminal Planar TiO2-x Memristive Devices
〇(M1)Zijie Meng1, Yusuke Hayashi1, Tetsuya Tohei1, Akira Sakai1 (1.School of Engineering Science, Osaka Univ.)
Keywords:
Neuromorphic Memristor,Resistive Switching,Reinforced Learning
Operant conditioning is a typical reinforced learning process that underlies animals’ daily behaviors. It is explained as learning to perform a certain behavior voluntarily in response to reward or aversive stimuli. Implementing operant conditioning on neuromorphic computing systems is expected to impart devices with the ability to deal with autonomous adaptive learning tasks. Recently, four-terminal planar TiO2-x memristors have demonstrated controllable conductance switching ability with considerable stability and repeatability through modulation of oxygen vacancy distribution inside the function layer. In this report, the feasibility of implementing operant conditioning in the four-terminal planar TiO2-x memristors is discussed, along with the evaluation of experimental results. Specific voltage application protocols for conductance manipulation, which are logically related to every factor of the learning process, is explored in detail.