Presentation Information
[24a-61A-5]Reliable Device Operation in High-Mobility Indium Oxide Thin Film Transistors
〇(PC)Prashant Ghediya1, Yusaku Magari1, Takashi Endo1, Mamoru Furuta2, Yuqiao Zhang3, Yasutaka Matsuo1, Hiromichi Ohta1 (1.RIES-Hokkaido Univ., 2.Kochi Univ. Tech., 3.Jiangsu Univ.)
Keywords:
Transparent oxide semiconductor devices,High-mobility indium oxide thin film transistors,Device realiability
Amongst various high-mobility transparent oxide semiconductors based thin film transistors (TFTs), polycrystalline indium oxide (In2O3) TFTs with a high field effect mobility (~ 100 cm2 V−1 s−1) are considered as a potential candidate for the next-generation of display applications as well as LSI and memory-based devices. Nonetheless, stability of In2O3 TFTs is one of the daunting challenges as it always shows a large threshold voltage (Vth) shift especially when negative gate bias stress (NBS) is applied. Here we show that the In2O3-TFTs passivated with C-type rare earth oxide (C-Ln2O3) films are highly reliable and do not show Vth shift under NBS of -20 V for 5000 sec. We observed that the C-Ln2O3 were grown heteroepitaxially on In2O3 crystal. This would be the origin of the high reliability of the In2O3-TFTs passivated with C-Ln2O3. The present finding accelerates the development of next-generation displays using high-mobility In2O3-TFTs.