[24a-61A-1~7] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)English Presentation

[24a-61A-7] Study on the correlation between carbon impurity and electrical properties of InO_x thin film

〇CHIATSONG CHEN¹, Yuki Yoshimoto², Toshifumi Irisawa¹, Tatsuro Maeda¹ (1.AIST, 2.KE)

Keywords:

oxide semiconductor,carbon,Hall measurement

Indium oxide (InO_x) based oxide semiconductors (OSs) have stirred up much attention toward low-power CMOS devices by stacking OS transistors and memory above logic circuits. Moreover, OS thin film prepared by atomic layer deposition (ALD) is of interest thanks to the excellent uniformity, step coverage, and thickness controllability to approach 3-dimensional structures. Although there are many advantages in ALD to fabricate OS transistors, impurities of carbon (C) and hydrogen (H) from the non-decomposed precursor will lead to the huge amount of oxygen vacancy (Vo) and the degradation of device performance. In order to improve the cut-off characteristics of OS transistors for low-power CMOS applications, the influence of impurities within InO_x-based thin film should be carefully investigated. In this work, the chemical insight on the effect of C impurity on intrinsic and electrical properties of InO_x thin film was emphasized.