[24p-11E-1~9] 3.10 Photonic structures and phenomena (formerly 3.11)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)English Presentation

[24p-11E-1] Transfer printing of GaAs nanobeam cavity embedding InAs QDs on SiN waveguide

〇(DC)Natthajuks Pholsen^1,2, Akinari Fujita³, Makoto Okano⁴, Nicolai Bart⁵, Arne Ludwig⁵, Andreas Wieck⁵, Yasutomo Ota³, Satoshi Iwamoto^1,2 (1.RCAST, Univ. of Tokyo, 2.IIS, Univ. of Tokyo, 3.Keio Univ., 4.AIST, 5.Ruhr Univ. Bochum)

Keywords:

integrated quantum photonics,silicon nitride,quantum dot single photon source

Integrated quantum photonics based on silicon nitride (SiN) is attracting a lot of attention as a platform for quantum technologies. However, there is a lack of efficient deterministic single photon sources (SPSs) for SiN. Previously, our group demonstrated that a GaAs photonic crystal (PhC) nanobeam cavity embedding InAs/GaAs quantum dots (QDs) can efficiently couple the QD emission into an underlying Si waveguide and possibly on SiN as well. Nonetheless, experimental demonstration of coupling to a SiN waveguide has not been presented yet. Here, we demonstrate the coupling of a GaAs PhC nanobeam cavity with InAs/GaAs QDs to an underlying SiN waveguide. The coupling efficiency from the cavity into the waveguide was estimated to be 40%.