Presentation Information

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)English Presentation

[24p-11E-2]Quantum confined Stark effect of InAs/GaAs QDs on silica with ITO electrodes fabricated by transfer printing

〇(DC)Natthajuks Pholsen^1,2, Akinari Fujita⁴, Masahiro Kakuda³, Yasuhiko Arakawa³, Kenji Ikeda⁵, Nobukiyo Kobayashi⁵, Yasutomo Ota⁴, Satoshi Iwamoto^1,2 (1.RCAST, Univ. of Tokyo, 2.IIS, Univ. of Tokyo, 3.NanoQuine, Univ. of Tokyo, 4.Keio Univ., 5.Denjiken)

Keywords:

quantum dot single photon source,quantum confined Stark effect,transfer printing

Hybrid integrated quantum dots fabricated by transfer printing have been shown to be an efficient single-photon source on integrated quantum photonics. However, tuning of the emission wavelength of quantum dots is necessary for large scale integration. Recently, local quantum confined Stark effect (QCSE) with external metal electrodes has been demonstrated as a promising solution. Nevertheless, high absorption loss in metal could prevent efficient coupling of generated single photons into the optical circuits. In this work, we demonstrated quantum confined Stark shifts of InAs/GaAs QDs with ITO transparent electrodes fabricated by transfer printing. Emissions from QDs showed sufficient parabolic quantum confined Stark shifts while the quality factor of a cavity showed negligible absorption loss for single-photon sources.

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