Presentation Information
[24p-22B-11]Improvement of device performance of solution-processed multilayered LEDs with QD/polymer blend as the emission layer
〇Eiji Itoh1, Taisuke Sekino1 (1.Shinshu Univ.)
Keywords:
inverted hybrid light emitting diode,Quantum Dot Semiconductor,meniscus coat
In this research, we aimed to develop a multilayered light-emitting-diodes (QLEDs) with the semiconductor quantum dots and a polymer blend light emitting layer. We fabricated and evaluated the solution-processed organic-inorganic hybrid light-emitting device with the inverted structures. The improved meniscus method reduced the amount of material used for the luminescent layer per coating to less than 1/10 that of the spin coating method, and the film thickness was controlled by repeating the film formation 2-3 times. The threshold voltage and EQE were improved by QD: PMMA blend compared with QD: PVCz blend, and then operated at 2.4 V for orange QLEDs and 3.6 V for blue QLEDs. The device properties were further improved by inserting the ZrOx based hole blocking electron buffer layer and PMAH/Ag anode based on the low-temperature and solution-processable techniques.