Presentation Information
[25a-11F-11]Spectroscopic infrared thermal light source based on uniaxially-oriented Ni-based superalloy films
〇Andrea RuizPerona1,2, Toan Tran Phuoc1,2, Thien Duc Ngo1, Hiroshi Harada1, Tadaaki Nagao1,2 (1.NIMS, 2.Hokkaido Univ.)
Keywords:
nanophotonics
Plasmonic perfect absorbers (PAs) allow to selectively emit infrared radiation with a very narrow spectral resolution. For this reason, they are drawing an increasing interest for applications such as plasmon-enhanced vibrational spectroscopy, selective drying systems, thermophotovoltaics or spectroscopic infrared light sources in gas sensors. Refractory materials (Mo, W, NiTi, TiN…) present good mechanical and chemical stability at high temperatures (above 400ºC), however their optical properties are deficient compared to representative plasmonic metals like Au, Cu or Al. Meanwhile, these materials present lower melting points and can easily be oxidized, hindering the development of thermophotonic and photothermal applications under high-temperature conditions. To overcome these limitations, the aim of this research is to find a material with good plasmonic response and high temperature stability which can be used in high-temperature photo-energy applications, such as thermal emitters or photodetectors.
In this study, nickel aluminum (NiAl) thin films are fabricated by direct current (DC) sputtering deposition under different annealing conditions. High temperature deposited films present uniaxial nature with enhanced crystallinity to reduce optical losses, which leads to improved plasmonic figure of merit (FOM). On the other hand, post-annealing treated NiAl films present smooth surface morphology with low root mean squared roughness (< 2 nm). To integrate high crystallinity and low surface roughness, we proceeded with the combination of in situ heating- and post-annealing process in sputter deposition. After the optimization of the material properties was performed, we will fabricate wavelength-selective plasmonic thermal light source based on our electromagnetic simulations. We expect that the fabricated devices will exhibit outstanding resonant absorption/emission designed through our simulations.
In this study, nickel aluminum (NiAl) thin films are fabricated by direct current (DC) sputtering deposition under different annealing conditions. High temperature deposited films present uniaxial nature with enhanced crystallinity to reduce optical losses, which leads to improved plasmonic figure of merit (FOM). On the other hand, post-annealing treated NiAl films present smooth surface morphology with low root mean squared roughness (< 2 nm). To integrate high crystallinity and low surface roughness, we proceeded with the combination of in situ heating- and post-annealing process in sputter deposition. After the optimization of the material properties was performed, we will fabricate wavelength-selective plasmonic thermal light source based on our electromagnetic simulations. We expect that the fabricated devices will exhibit outstanding resonant absorption/emission designed through our simulations.