Presentation Information
[25a-22A-4]Improved phosphorus incorporation in MBE-grown ZnTe layer using a cracked Zn3P2 dopant source
〇(D)Muhamad Mustofa1, Katsuhiko Saito1, Qixin Guo1, Tooru Tanaka1 (1.Saga Univ.)
Keywords:
ZnTe,Phosphorus-doping,Molecular Beam Epitaxy
In ZnTeO based Intermediate Band Solar Cell (IBSC), not only improving the multiband layer that is crucial for enhancing the efficiency of solar cell,but also equally important to improve other layers especially a good conductivity control of the p-type ZnTe epitaxial layer is important to increase the carrier collection efficiency of the solar cell. Phosphorus (P) has been used as an acceptor dopant in ZnTe with good controllability. Here, we report the result of MBE growth of P-doped ZnTe using a cracked Zn3P2 as a dopant source where the P4 molecular beam from Zn3P2 is cracked to P2 molecular beam, leading to the increase of the P incorporation into the film.