Presentation Information
[25p-12K-4]Low-intensity Photon Detection Using Codoped-Si Single-Electron Transistors
Pooja Sudha1, Arup Samanta1, Shogo Miyagawa2, 〇Daniel Ioan Moraru2 (1.IIT Roorkee, 2.RIE, Shizuoka Univ.)
Keywords:
dopant,single-electron tunneling,light illumination
Due to the diverse range of applications in emerging domains, such as quantum communication and quantum information, the demand for low-intensity photon detection, including detection of single-photon effects, has significantly increased. Single-electron tunneling transistors (SETs) are an attractive choice for such sensitive detection because they can even sense the charge of a single electron.
It has been previously demonstrated that single-photon absorption and conversion into electron-hole pairs can be detected using arrays of quantum dots (QDs) in silicon-on-insulator field-effect transistors (SOI-FETs) doped with phosphorus (P) donors. In such nanoscale channels containing QDs, likely due to the randomness in P-donor distribution, trapping and de-trapping near conduction path can significantly modulate the SET current. The purpose of this work is to study such phenomena in high-doped SOI-FETs.
It has been previously demonstrated that single-photon absorption and conversion into electron-hole pairs can be detected using arrays of quantum dots (QDs) in silicon-on-insulator field-effect transistors (SOI-FETs) doped with phosphorus (P) donors. In such nanoscale channels containing QDs, likely due to the randomness in P-donor distribution, trapping and de-trapping near conduction path can significantly modulate the SET current. The purpose of this work is to study such phenomena in high-doped SOI-FETs.