Presentation Information
[25p-12K-5]Observation of Potential Modulation in Carbon Nanotube Transistors by Kelvin Probe Force Microscopy
Hayato Kawanishi1, 〇(D)Alfafa Daris1, Takuya Suzuki1, Arief Udhiarto3, Daniel Moraru2,1 (1.Shizuoka Univ. GSST, 2.Shizuoka Univ. RIE, 3.Univ. of Indonesia EE)
Keywords:
Carbon Nanotube,Carbon Nanotube Field-effect Transistor,Kelvin Probe Force Microscopy
The increase of performance of modern transistors by reducing their dimensions has been an ongoing trend since more than fifty years ago. This continuous reduction in size results in fundamental challenges concerning nanoscale physical characteristics [1]. Carbon nanotube (CNT) is an alternative material providing superior carrier transport properties and single-digit nanometre dimensions, which are key features to become the channel component of future transistors.
We used KFM to profile CNT-FETs with a designed electrode-gap of 500nm under very low pressure in the order of 10-7 Pa. The KFM measures the topography and potential of a 1.5×1.5 µm2 area. The KFM measurement showed topography and potential profiles. The measurements confirmed bundles of semiconducting CNTs bridging the aluminium electrodes with a diameter of around 20 nm. Furthermore, we observed electrostatic potential modulation with the application of substrate voltage (VSub).
We used KFM to profile CNT-FETs with a designed electrode-gap of 500nm under very low pressure in the order of 10-7 Pa. The KFM measures the topography and potential of a 1.5×1.5 µm2 area. The KFM measurement showed topography and potential profiles. The measurements confirmed bundles of semiconducting CNTs bridging the aluminium electrodes with a diameter of around 20 nm. Furthermore, we observed electrostatic potential modulation with the application of substrate voltage (VSub).