Presentation Information
[25p-22C-10]Exploring the link between halide segregation and the performance and stability of wide bandgap perovskite solar cells
〇Richard Murdey1, Ai Shimazaki1, Ryuji Kaneko1, Minh Anh Truong1, Tomoya Nakamura1, Atsushi Wakamiya1 (1.Kyoto Univ.)
Keywords:
wide bandgap perovskite solar cell,halide segregation,J-V analysis
In this work, we clarify the relationship between device performance and halide segregation by comparing current-voltage (J–V) curves and external quantum efficiencies (EQE) of 19 sample PIN devices, first in their initial state and again after the devices were operated under maximum power point conditions at 1 SUN Equiv. for 100 h. The bandgaps of the perovskites ranged from 1.57 eV to 1.86 eV, and the tested devices spanned different halide and A-site compositions, fabrication methods, surface treatments, and charge transport layers. The degree of halide segregation was quantified from the external quantum efficiency (EQE) data, specifically the changes in the derivative signal, d(EQE)/dE. For samples with similar bandgaps, we confirmed that systems with suppressed halide segregation had higher open circuit voltages (Voc). Device stability, on the other hand, was consistently lower for the wide band gap devices, independent of the degree of halide segregation, because of the loss of short circuit current (Jsc) and lower fill factor (FF).