Presentation Information

[25p-71B-6]Epitaxial Growth of Topological Semimetal Sb

〇Tomoki Hotta1, Le Duc Anh1,2,3, Masaaki Tanaka1,3 (1.Univ. of Tokyo, 2.PRESTO, JST, 3.CSRN, Univ. of Tokyo)


topological semimetal,Antimony,molecular beam epitaxy

In this study, we have studied epitaxial growth of Sb on GaSb (111) by molecular beam epitaxy. Sb has a rhombohedral A7 crystal structure and nearly lattice matched to GaSb(111). The sample structure is (from top to bottom) Sb/GaSb/GaAs(111)A substrate. After the growth of GaSb, Sb is deposited at Tsub = 30℃. The RHEED pattern becomes dark and halo, indicating that the deposited Sb layer is amorphous. After the deposition, Tsub is heated up and maintained at 260℃. The RHEED pattern becomes bright and streaky after annealing for 40 minutes, indicating that the Sb layer becomes single-crystalline during annealing by solid-phase epitaxy. The X-ray diffraction (XRD) spectrum indicates that the c-axis of Sb is aligned perpendicular to the film plane, confirming epitaxial growth of Sb on GaSb(111). Transport properties of the epitaxial Sb film will also be reported. This III-V-compatible and easy-to-fabricate elemental topological semimetal Sb has great potential for device applications.