[25p-71B-1~13] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[25p-71B-6] Epitaxial Growth of Topological Semimetal Sb

〇Tomoki Hotta¹, Le Duc Anh^1,2,3, Masaaki Tanaka^1,3 (1.Univ. of Tokyo, 2.PRESTO, JST, 3.CSRN, Univ. of Tokyo)

Keywords:

topological semimetal,Antimony,molecular beam epitaxy

In this study, we have studied epitaxial growth of Sb on GaSb (111) by molecular beam epitaxy. Sb has a rhombohedral A7 crystal structure and nearly lattice matched to GaSb(111). The sample structure is (from top to bottom) Sb/GaSb/GaAs(111)A substrate. After the growth of GaSb, Sb is deposited at T_sub = 30℃. The RHEED pattern becomes dark and halo, indicating that the deposited Sb layer is amorphous. After the deposition, T_sub is heated up and maintained at 260℃. The RHEED pattern becomes bright and streaky after annealing for 40 minutes, indicating that the Sb layer becomes single-crystalline during annealing by solid-phase epitaxy. The X-ray diffraction (XRD) spectrum indicates that the c-axis of Sb is aligned perpendicular to the film plane, confirming epitaxial growth of Sb on GaSb(111). Transport properties of the epitaxial Sb film will also be reported. This III-V-compatible and easy-to-fabricate elemental topological semimetal Sb has great potential for device applications.