Advanced Research Infrastructure for Materials and Nanotechnology in Japan（ARIM Japan）

AIST Nano-Processing Facility

ALD Japan, Inc.

1. Anric Technologies' bench top ALD systems (Plasma and thermal type, Particle-handling) and ozone generator 2. Meaglow's hollow cathode plasma unit

ARISE TECHNOLOGY Co., Ltd.

Low-temp sputtering cathode

Beneq KK

TFS200/TFS500：for R&D, P400A/P800：for Batch production, Spatial ALD（C2R、Genesis）

CORNES Technologies Ltd.

4 inch diamond substrate, Diamond CVD machine leaflets

ELIONIX INC.

EpiQuest, Inc.

Found Four Co., Ltd.

Atomic Layer Deposition system

Hightec Systems Corporation

JSW AFTY Corporation

Thin film deposition tool introduction panels, Film samples

Kenix Corporation

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Keystone Scientific K.K.

Langmuir-Blodgett Troughs and Surface Tensiometers, Brewster angle microscopy

NIHON DENSHI SEIKI CO., LTD.

Priways Co., Ltd.

High-resolution Printing machine, Table-size coater

SAKURA COLOR PRODUCTS CORPORATION

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Sanoh Industrial Co., Ltd.

Sanoh Industrial　specialize in contract wafer processing business for providing epi-ready wafers processed from as-grown crystals and reuse of epi-grown wafers by removing the epi-films of next-generation semiconductor materials such as GaN, AlN, SiC. We collaborate on the development with Nagaoka University of Technology and have made it possible to design high quality wafering processes.

SANYU ELECTRON CO., LTD

Semilab Japan KK

SHINKOSHA CO., LTD.

Oxide Single Crystal Substrates & Sapphire Products

SPLEAD Corporation

Techno Print Co., Ltd.

Pre-corting glass, comb pattern, plating pattern

TNS Systems LLC

YAG Laser Micro Processing System, Wire Bonder, Die Bonder, Probing solution for Semiconductor Test, Compact PVD System, Custom-made equipment

Tosoh Corporation

1) GaN sputtering target: High purity and high density GaN target capable of forming highly oriented GaN films by sputtering method. 2) Si doped GaN sputtering target: Si diped GaN target capable of forming low-resistance n-GaN films by sputtering. 3) CrSi sputtering target: High resistivity and temperature stability can be obtained. 4) Indium oxide-based sputtering targets①USR: It crystallizes at 100°C, which is difficult to achieve with ITO, and obtains low resistance.②SRE: High infrared transmittance and low resistivity can be obtained. 5) AlSc target: High scandium composition(Sc10,20,40at%) and high density AlSc target.

TPT Japan Co., Ltd.