Presentation Information
[10a-N201-4]Thermoelectric properties of nano-grained bulk p-type Si-Ge
Ryogo Ishihara1, Masaharu Matsunami1, 〇Tsunehiro Takeuchi1 (1.Totota Tech. Inst.)
Keywords:
nano-grained bulk,high-ZT,Low temperature sintering
By employing low-melting-point dopants like Al and Ga, we developed a technique to inhibit grain growth during the sintering of p-type Si-Ge materials. This method allowed for a substantial reduction in sintering temperature, leading to the successful production of high-performance p-type samples that exhibit high density and low thermal conductivity, with minimized grain growth. The improved dimensionless figure of merit further validates our findings, and we will report these results in detail.