[10a-N206-1~10] 6.3 Oxide electronics

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[10a-N206-8] Resistance control of CaRuO3 ultrathin films by carrier doping

〇(M1)Yusaku Hamada¹, Nachi Obara¹, Kazushi Shinya¹, Hiroyoshi Nobukane², Shuhei Shimoda³, Masahito Sakoda¹ (1.AP Hokkaido Univ, 2.Phys. Hokkaido Univ, 3.IFC Hokkaido Univ)

Keywords:

CaRuO3 ultrathin films,Resistance control

In this study, we investigated whether a metal-insulator transition can be observed by controlling the Fermi surface through carrier doping using an electric double-layer transistor (EDLT) with CaRuO3 thin films of the same thickness.