Presentation Information

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[10p-N203-4]Magneto-Optical Terahertz Time-Domain Ellipsometry of the Narrow-Gap Semiconductor InSb with Varying Carrier Densities

〇(D)Zixi Zhao¹, Verdad C. Agulto¹, Atsuki Kamio¹, Kosaku Kato¹, Thanh Nhat Khoa Phan¹, Toshiyuki Iwamoto^1,2, Toshihiko Shimizu¹, Nobuhiko Sarukura¹, Makoto Nakajima¹ (1.ILE, Univ. of Osaka, 2.PNP)

Keywords:

semiconductor evaluation

In order to demonstrate the application of magneto-optical terahertz time-domain ellipsometry (MO-THz-TDE) in the characterization of semiconductors, doped and undoped InSb wafers were evaluated with a magnetic field of B = 0.4 T. The dielectric tensors of both InSb samples were obtained, and the magneto plasmon–phonon coupling effect was observed. Furthermore, electron transport properties such as effective mass and carrier density were derived using the Drude model without any assumptions.

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