Presentation Information
[10p-N204-2]Nonlinear and Non-adiabatic Effect of the Internal Vector Potential and Photon-Breeding Devices
〇Itsuki Banno1 (1.Univ. of Yamanashi)
Keywords:
dressed photon,internal electromagnetic field,dissipative structure
The photon-breeding(PB) process leads to high efficient luminescence from the indirect-transition-type semiconductors as well as direct-transition-type ones. The PB device accompanies by giant magneto-optical effect and interaction with optical phonon. This theoretical work explore the operating state of PB device as a state far-from the ground state, using variational approach for the action integral of quantum electrodynamics. The metrology in Heisenberg picture and result about direct-transition-type semiconductor; the modification of Emission wavelength and the side band caused by TO-type lattice vibration.