[10p-N221-1~10] 3.10 Photonic structures and phenomena

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[10p-N221-2] Fabrication and Evaluation of an Inverse-Designed High-Q SiN Photonic Crystal L6/5 Cavity

〇Masato Takiguchi^1,2, Xuen Zhen Lim², Peter Heidt², Takuma Aihara³, Sotatsu Yanagimoto², Hisashi Sumikura^1,2, Masaya Notomi^1,2,4 (1.NTT NPC, 2.NTT BRL, 3.NTT DTL, 4.Science Tokyo)

Keywords:

photonic crystal,SiN,cavity

High-performance SiN photonic crystal (PhC) cavities are important for constructing hybrid systems with materials operating in the visible range. However, no studies have demonstrated high Q/V in two-dimensional SiN PhC cavities designed using deterministic methods. This is primarily due to the low refractive index of SiN, which limits the formation of a wide photonic bandgap and leads to significant out-of-plane losses. To overcome these limitations, we previously employed an inverse design approach to develop an L6/5-type PhC cavity with a Q-factor exceeding 500,000—representing a two-order-of-magnitude improvement over previous reports—while also reducing the mode volume by approximately 30% [1]. In this study, we fabricated the cavity designed using this inverse design method [2] and experimentally evaluated its optical properties.