[7a-N302-1~9] 10.2 Fundamental and exploratory device technologies for spin

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[7a-N302-6] Geometric structure dependence of RF oscillation properties of spin Hall nano-oscillators

〇(M1)Hitoshi Iida^1,2, Karunathilaka Vihanga De Zoysa¹, Yuzu Yoshida^1,2, Aakanksha Sud^1,3, Aurelien Lagarrigue¹, Takaaki Dohi¹, Akash Kumar^1,4,7, Ahmad Awad^1,4,7, Shun Kanai^{1,2,5,6,7,8,9}, Johan Akerman^1,4,7, Shunsuke Fukami^{1,2,7,8,10,11}, Hideo Ohno^1,7,8,10 (1.LNS RIEC Tohoku Univ., 2.Tohoku Univ. Engineering, 3.FRIS Tohoku Univ., 4.Univ. of Gothenburg, 5.JST-PRESTO, 6.DEFS Tohoku Univ., 7.CSIS Tohoku Univ., 8.WPI-AIMR Tohoku Univ., 9.QST, 10.CIES Tohoku Univ., 11.InaRIS)

Keywords:

spin Hall nano oscillator,spin Hall effect,nano device