Presentation Information
[7a-P03-1]Growth and characterization of CdTe single crystals by THM using off-stoichiometric polycrystals
〇Hayato Tsuru1, Akira Nagaoka1, Isshin Sumiyoshi2, Yoshitaro Nose2, Kenji Yoshino1 (1.Miyazaki Univ., 2.kyoto Univ.)
Keywords:
crystal growth,Travelling Heater Method (THM),CdTe
CdTe single crystals were grown by THM method using off-stoichiometric polycrystalline CdTe (Cd/Te = 0.83–1.20) as the feed material, and their crystallinity and electrical properties were characterized. The resistivity reached up to 108 Ω cm, and carrier type, carrier concentration, and resistivity varied depending on composition. The results indicate that deep-level defects contribute to the observed high resistivity.